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Charge-Tunable Indium Gallium Nitride Quantum Dots

机译:电荷可调铟氮化镓量子点

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摘要

III-Nitride quantum dots have emerged as a new chip-scale system for quantuminformation science, which combines electrical and optical interfaces on asemiconductor chip that is compatible with non-cryogenic operatingtemperatures. Yet most work has been limited to optical excitations. To enablesingle-spin based quantum optical and quantum information research, wedemonstrate here quantized charging in optically active, site-controlledIII-Nitride quantum dots. Single-electron charging was confirmed by the voltagedependence of the energy, dipole moment, fine structures and polarizationproperties of the exciton states in the quantum dots. The fundamental energystructures of the quantum dots were identified, including neutral and chargedexcitons, fine structures of excitons, and A and B excitons. The results laythe ground for coherent control of single charges in III-Nitride QDs, opening adoor to III-Nitride based spintronics and spin-qubit quantum informationprocessing.
机译:III-氮化物量子点已经成为一种用于量子信息科学的新型芯片级系统,该系统将与非低温工作温度兼容的半导体芯片上的电和光接口相结合。然而,大多数工作仅限于光激发。为了使基于自旋的量子光学和量子信息研究成为可能,在此演示了在光学活性的,定点控制的III-氮化物量子点中的量化电荷。单电子充电通过能量,偶极矩,量子点中激子态的精细结构和极化特性的电压依赖性来确定。确定了量子点的基本能量结构,包括中性和带电激子,激子的精细结构以及A和B激子。该结果为III-氮化物量子点中单电荷的相干控制,基于III-氮化物的自旋电子学和自旋量子位量子信息处理打开了基础。

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